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| N-CHANNEL 150V - 0.045 - 27A PowerFLATTM LOW GATE CHARGE STripFETTM MOSFET TYPE STL15N15 s s s s s STL27N15 TARGET DATA VDSS 150 V RDS(on) <0.060 ID 27 A(1) TYPICAL RDS(on) = 0.045 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE VERY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroelectronics unique "STripFETTM" process has specifically been designed to minimize input capacitance and gate charge. It's therefore suitable as primary switch in advanced high efficiency, high frequency isolated DC-DC converter for telecom an computer application. The new PowerFLATTM package allows e significant reduction in a board space without compromising performance. PowerFLATTM(6x5) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS s TELECOM AND BATTERY CHARGER ADAPTOR s SYNCHRONOUS RECTIFICATION Ordering Information SALES TYPE STL27N15 MARKING L27N15 PACKAGE PowerFLAT PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(3) Ptot(2) Ptot(1) dv/dt (5) Tstg Tj June 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C (Steady State) Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C (Steady State) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 150 150 20 6 4 24 4 80 0.03 TBD -55 to 150 Unit V V V A A A W W W/C V/ns C 1/6 STL27N15 THERMAL DATA Rthj-F Rthj-pcb(2) . Thermal Resistance Junction-Foot (Drain) Thermal Operating Junction-pcb 1.56 31.2 C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (6) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 3 A Min. 1 0.045 0.060 Typ. Max. Unit V DYNAMIC Symbol gfs (6) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 50 V ID = 5 A Min. Typ. TBD TBD TBD TBD Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/6 STL27N15 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 3 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 50V ID= 6A VGS=10V Min. Typ. TBD TBD TBD TBD TBD 28 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 3 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. TBD TBD Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM(3) VSD (6) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A VGS = 0 TBD TBD TBD Test Conditions Min. Typ. Max. 6 24 1.2 Unit A A V ns nC A di/dt = 100A/s ISD =6 A VDD = 30 V j = 150C (see test circuit, Figure 5) (1) The value is rated according Rthj-F. (2) When Mounted on FR-4 board of 1 inch, 2oz Cu (3) Pulse width limited by safe operating area. (5) ISD 6A, di/dt 300A/s, VDD V(BR)DSS, Tj T JMAX . (6) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 3/6 STL27N15 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STL27N15 5/6 STL27N15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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